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 Features
* * * * * * * *
Single Power Supply Read and Write Voltage, 5V 5% High Performance 200 ns Maximum Access Time 6 ms Typical Sector Write CMOS Low Power Consumption 20 mA Typical Active Current (Byte Mode) 400 A Typical Standby Current Fully MS-DOS Compatible Flash Driver and Formatter Virtual-Disk Flash Driver with 256 Bytes/Sector Random Read/Write to any Sector No Erase Operation Required Prior to any Write Zero Data Retention Power Batteries not Required for Data Storage PCMCIA/JEIDA 68-Pin Standard Selectable Byte- or Word-Wide Configuration High Re-programmable Endurance Built-in Redundancy for Sector Replacement Minimum 100,000 Write Cycles Five Levels of Write Protection Prevent Accidental Data Loss
256K byte Flash Memory PCMCIA Card AT5FC256
Block Diagram
Pin Configuration
Pin Name A0-A17 D0-D15 CE1, CE2, WE, OE, REG CD, WP BVD1, BVD2 Function Addresses Data Control Signals Card Status
Description
Atmel's Flash Memory Card provides the highest system level performance for data and file storage solutions to the portable PC market segment. Data files and applications programs can be stored on the AT5FC256. This allows OEM manufacturers of portable system to eliminate the weight, power consumption and reliability issues associated with electro-mechanical disk-based systems. The AT5FC256 requires a single voltage power supply for total system operation. No batteries are needed for data retention due to its Flash-based technology. Since no high voltage (12-volt) is required to perform any write operation, the AT5FC256 is suitable for the emerging "mobile" personal systems. The AT5FC256 is compatible with the 68-pin PCMCIA/JEIDA international standard. Atmel's Flash Memory Cards can be read in either a byte-wide or wordwide mode which allows for flexible integration into various system platforms. It can be read like any typical PCMCIA SRAM or ROM card. The Card Information Structure (CIS) can be written by the OEM or by Atmel at the attribute memory address space using a format utility. The CIS appears at the beginning of the card's attribute memory space and defines the lowlevel organization of data on the PC card. The AT5FC256 contains a separate 2K byte EEPROM memory for the card's attribute memory space. The third party software solutions such as AWARD Software's CardWare system and the SCM's Flash File System (FFS), enables Atmel's Flash Memory Card to emulate the function of essentially all the major brand personal computers that are DOS/Windows compatible. For some unique portable computers, such as the HP200/100/95LX series, the software Driver and Formatter are also available. The Atmel Driver and Formatter utilizes a self-contained spare sector replacement algorithm, enabled by Atmel's small 256-byte sectors, to achieve long term card reliability and endurance.
Block Diagram
2
AT5FC256
AT5FC256
Absolute Maximum Ratings*
Storage Temperature........................ -30C to +70C Ambient Temperature with Power Applied................................... -10C to +70C Voltage with Respect to Ground, All pins (1) ........... -2.0V to +7.0V VCC (1) ................................................ -2.0V to +7.0V Output Short Circuit Current (2) .................... -200 mA
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the card. This is a stress rating only and functional operation of the card at these or any other conditions beyond those indicated in the operational sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Notes: 1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transients, inputs may overshoot VSS to -2.0V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins is VCC + 0.5V. During voltage transitions, outputs may overshoot to VCC + 2.0V for periods up to 20 ns. 2. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second. Conditions equal VOUT = 0.5V or 5.0V, VCC = Max.
DC and AC Operating Range
AT5FC256-20 Operating Temperature (Case) VCC Power Supply Com. 0oC - 70oC 5V 5%
Pin Capacitance (f = 1 MHz, T = 25C) (1)
Symbol CIN1 COUT CIN2 CI/O
Note:
Parameter Address Capacitance Output Capacitance Control Capacitance I/O Capacitance
Conditions VIN = 0V VOUT = 0V VIN = 0V VI/O = 0V
Typ
Max 20 20 45 20
Units pF pF pF pF
1. This parameter is characterized and is not 100% tested.
3
PC Card Pin Assignments
I = Input, O = Output, I/O = Bi-directional, NC = No Connect Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Signal GND D3 D4 D5 D6 D7 CE1 A10 OE A11 A9 A8 A13 A14 WE NC VCC NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 WP GND I I I I I I I I I I I I/O I/O I/O O I/O I/O I/O I/O I/O I I I I I I I I I I/O Function Ground Data Bit 3 Data Bit 4 Data Bit 5 Data Bit 6 Data Bit 7 Card Enable 1 (1) Address Bit 10 Output Enable Address Bit 11 Address Bit 9 Address Bit 8 Address Bit 13 Address Bit 14 Write Enable No Connect Power Supply No Connect Address Bit 16 Address Bit 15 Address Bit 12 Address Bit 7 Address Bit 6 Address Bit 5 Address Bit 4 Address Bit 3 Address Bit 2 Address Bit 1 Address Bit 0 Data Bit 0 Data Bit 1 Data Bit 2 Write Protect (1) Ground Pin 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 Signal GND CD1 D11 D12 D13 D14 D15 CE2 NC RFU RFU A17 NC NC NC NC VCC NC NC NC NC NC NC NC NC NC REG BVD2 BVD1 D8 D9 D10 CD2 GND I O O I/O I/O I/O O I O I/O I/O I/O I/O I/O I I/O Function Ground Card Detect 1 (1) Data Bit 11 Data Bit 12 Data Bit 13 Data Bit 14 Data Bit 15 Card Enable 2 (1) No Connect Reserved Reserved Address Bit 17 No Connect No Connect No Connect No Connect Power Supply No Connect No Connect No Connect No Connect No Connect No Connect No Connect No Connect No Connect Register Select Battery Voltage Detect 2 (2) Battery Voltage Detect 1 (2) Data Bit 8 Data Bit 9 Data Bit 10 Card Detect 2 (1) Ground
Notes: 1. Signal must not be connected between cards.
2. BVD = Internally pulled up.
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AT5FC256
AT5FC256
Pin Description
Symbol A0-A17 Name Address Inputs Type Input Input/Output Function Address Inputs are internally latched during write cycles. Data Input/Outputs are internally latched on write cycles. Data outputs are latched during read cycles. Data pins are active high. When the memory card is de-selected or the outputs are disabled the outputs float to tri-state. Card Enable is active low. The memory card is de-selected and power consumption is reduced to standby levels when CE is high. CE activates the internal memory card circuitry that controls the high and low byte control logic of the card, input buffers, segment decoders, and associated memory devices. Output Enable is active low and enables the data buffers through the card outputs during read cycles. Write Enable is active low and controls the write function to the memory array. The target address is latched on the falling edge of the WE pulse and the appropriate data is latched on the rising edge of the pulse. PC Card Power Supply for device operation (5.0V 5%) Ground Output Output When Card Detect 1 and 2 = Ground the system detects the card. Write Protect is active high and indicates that all card write operations are disabled by the write protect switch. Corresponding pin is not connected internally. Output Input Internally pulled up. (There is no battery in the card.) Provide access to Card Information Structure in the Attribute Memory Device
D0-D15
Data Input/Output
CE1, CE2
Card Enable
Input
OE
Output Enable
Input
WE
Write Enable
Input
VCC GND CD1, CD2 WP NC BVD1, BVD2 REG
PC Card Power Supply Ground Card Detect Write Protect No Connect Battery Voltage Detect Register Select
Memory Card Operations
The AT5FC256 Flash Memory Card is organized as an array of 2 individual AT29C010A devices. They are logically defined as contiguous sectors of 256 bytes. Each sector can be read and written randomly as designated by the host. There is NO need to erase any sector prior to any write operation. Also, there is NO high voltage (12V) required to perform any write operations. The common memory space data contents are altered in a similar manner as writing to individual Flash memory devices. On-card address and data buffers activate the appropriate Flash device in the memory array. Each device internally latches address and data during write cycles. Refer to the Common Memory Operations table.
Byte-Wide Operations
The AT5FC256 provides the flexibility to operate on data in byte-wide or word-wide operations. Byte-wide data is available on D0-D7 for read and write operations (CE1 = low, CE2 = high). Even and odd bytes are stored in a pair of memory chip segments (i.e., S0 and S1) and are accessed when A0 is low and high respectively.
Word-Wide Operations
The 16 bit words are accessed when both CE1 and CE2 are forced low, A0 = don't care. D0-D15 are used for wordwide operations. (continued) 5
Memory Card Operations (Continued)
Read Enable/Output Disable
Data outputs from the card are disabled when OE is at a logic-high level. Under this condition, outputs are in the high-impedance state. The A17 selects the paired memory chip segments, while A0 decides the upper or lower bank. The CE1/CE2 pins determine either byte or word mode operation. The Output Enable (OE) is forced low to activate all outputs of the memory chip segments. The oncard I/O transceiver is set in the output mode. The AT5FC256 sends data to the host. Refer to AC Read Waveforms drawing. pin lengths in order to protect the card with proper power supply sequencing in the case of hot insertion and removal. A mechanical write protection switch provides a second type of write protection. When this switch is activated, WE is internally forced high. The Flash memory arrays are therefore write-disabled. The third type of write protection is achieved with the builtin low VCC sensing circuit within each Flash device. If the external VCC is below 3.8V (typical), the write function is inhibited. The fourth type of write protection is a noise filter circuit within each Flash device. Any pulse of less than 15 ns (typical) on the WE, CE1 or CE2 inputs will not initiate a program cycle. The last type of write protection is based on the Software Data Protection (SDP) scheme of the AT29C010A devices. Each of the sixteen devices needs to enable and disable the SDP individually. Refer to the Software Data Protected Programming/Disable Algorithm tables for descriptions of enable and disable SDP operations.
Standby Operations
When both CE1 a n d CE2 are at logic-high level, the AT5FC256 is in Standby mode; i.e., all memory chip segments as well as the decoder/transceiver are completely de-selected at minimum power consumption. Even in the byte-mode read operation, only one memory chip segment (even or odd) is active at any time. The other memory chip segment remains in standby. In the word-mode two memory chip segments are in active.
Write Operations
The AT5FC256 is written on a sector basis. Each sector of 256 bytes can be selected randomly and written independently without any prior erase cycle. A8 to A17 specify the sector address. Within each sector, the individual byte address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Each byte pair to be programmed must have its high-to-low transition on WE (or CE) within 150 s of the low-to- high transition of WE (or CE) of the preceding byte pair. If a high-to-low transition is not detected within 150 s of the last low-to-high transition, the data load period will end and the internal programming period will start. All the bytes of a sector are simultaneously programmed during the internal programming period. A maximum write time of 10 ms per sector is self-controlled by the Flash devices. Refer to AC Write Waveforms drawings.
Card Detection
Each CD (output) pin should be read by the host system to determine if the memory card is properly seated in the socket. CD1 and CD2 are internally tied to the ground. If both bits are not detected, the system should indicate that the card must be re-inserted.
CIS Data
The Card Information Structure (CIS) describes the capabilities and specifications of a card. The CIS of the AT5FC256 can be written either by the OEM or by Atmel at the attribute memory space beginning at address 00000H by using a format utility. The AT5FC256 contains a separate 2K byte EEPROM memory for the card's attribute memory space. The attribute is active when the REG pin is driven low. D0-D7 are active during attribute memory access. D8-D15 should be ignored. Odd order bytes present invalid data. Refer to the Attribute Memory Operations table.
Write Protection
The AT5FC256 has five types of write protection. The PCMCIA/JEIDA socket itself provides the first type of write protection. Power supply and control pins have specific
6
AT5FC256
AT5FC256
Common Memory Operations
X = Don't Care, where Don't Care is either VIL or VIH levels. Pins Read-Only Read (x8) (1) Read (x8) (2) Read (x8) (3) Read (x16) (4) Output Disable Standby Write-Only Write (x8) (1) Write (x8) (2) Write (x8) (3) Write (x16) (4) Output Disable VIH VIH VIH VIH VIH VIH VIH VIL VIL X VIL VIL VIH VIL X VIH VIH VIH VIH VIH VIL VIL VIL VIL VIL VIL VIH X X X High Z High Z Data In-Odd Data In-Odd High Z Data In-Even Data In-Odd High Z Data In-Even High Z VIH VIH VIH VIH VIH X VIH VIH VIL VIL X VIH VIL VIL VIH VIL X VIH VIL VIL VIL VIL VIH X VIH VIH VIH VIH VIH X VIL VIH X X X X High Z High Z Data Out-Odd Data Out-Odd High Z High Z Data Out-Even Data Out-Odd High Z Data Out-Even High Z High Z REG CE2 CE1 OE WE A0 D8-D15 D0-D7
Notes: 1. Byte access - Even. In this x8 mode, D0-D7 contain the "even" byte (low byte) of the x16 word. D8-D15 are inactive. 2. Byte access - Odd. In this x8 mode, D0-D7 contain the "odd" byte (high byte) of the x16 word. This is accomplished internal to the card by transposing D8-D15 to D0-D7. D8-D15 are inactive.
3. Odd byte only access. In this x8 mode, D8-D15 contain the "odd" byte (high byte) of the x16 word. D0-D7 are inactive. A0 = X. 4. Word access. In this mode D0-D7 contain the "even" byte while D8-D15 contain the "odd" byte. A0 = X
Memory Card Program Routine
Byte Mode
Memory Card Program Routine
Word Mode
7
Attribute Memory Operations
X = Don't Care, where Don't Care is either VIL or VIH levels. Pins Read-Only Read (x8) (1) Read (x8) Read (x8) Read (x16) Output Disable Standby Write-Only Write (x8) (1) Write (x8) Write (x8) Write (x16) Output Disable
Note:
REG
CE2
CE1
OE
WE
A0
D8-D15
D0-D7
VIL VIL VIL VIL VIL X
VIH VIH VIL VIL X VIH
VIL VIL VIH VIL X VIH
VIL VIL VIL VIL VIH X
VIH VIH VIH VIH VIH X
VIL VIH X X X X
High Z High Z Not Valid Not Valid High Z High Z
Data Out-Even Not Valid High Z Data Out-Even High Z High Z
VIL VIL VIL VIL VIL
VIH VIH VIL VIL X
VIL VIL VIH VIL X
VIH VIH VIH VIH VIH
VIL VIL VIL VIL VIL
VIL VIH X X X
High Z High Z Not Valid Not Valid High Z
Data In-Even Not Valid High Z Data In-Even High Z
1. Byte access - Even. In this x8 mode, D0-D7 contain the "even" byte (low byte) of the x16 word. D8-D15 are inactive.
8
AT5FC256
AT5FC256
DC Characteristics, Byte-Wide Operation
Symbol ILI ILO ISB ICC1 (1) Parameter Input Leakage Current Output Leakage Current VCC Standby Current Condition VCC = VCC Max, VIN = VCC or VSS VCC = VCC Max, VOUT = VCC or VSS VCC = VCC Max, CE = VCC 0.2V VCC = VCC Max, CE = VIL, OE = VIH, IOUT = 0 mA, at 5 MHz CE = VIL,WE = VIL, Programming in Progress Min Typ 1.0 1.0 0.4 Max 20 20 0.8 Units A A mA
VCC Active Read Current
20
40
mA
ICC2 VIL VIH VOL VOH
Note:
VCC Active Write Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage
20
40 0.8
mA V V
2.4 IOL = 3.2 mA IOH = -2.0 mA 3.8 0.40
V V
1. One Flash device active, one in standby.
DC Characteristics, Word-Wide Operation
Symbol ILI ILO ISB Parameter Input Leakage Current Output Leakage Current VCC Standby Current Condition VCC = VCC Max, VIN = VCC or VSS VCC = VCC Max, VOUT = VCC or VSS VCC = VCC Max, CE = VCC 0.2V VCC = VCC Max, CE = VIL, OE = VIH, IOUT = 0 mA, at 5 MHz CE = VIL, WE = VIL, Programming in Progress Min Typ 1.0 1.0 0.4 Max 20 20 0.8 Units A A mA
ICC1
VCC Active Read Current
40
80
mA
ICC2 VIL VIH VOL VOH
VCC Active Write Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage
40
80 0.8
mA V V
2.4 IOL = 3.2 mA IOH = -2.0 mA 3.8 0.40
V V
9
AC Read Characteristics
Symbol Parameter tRC tCE tACC tOE tLz tDF tOLZ tDF tOH tWC Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time Chip Enable to Output in Low Z Chip Disable to Output in High Z Output Enable to Output in Low Z Output Disable to Output in High Z Output Hold Time from First of Address, CE, or OE Change Write Recovery Time Before Read 5 10 5 60 5 60 Min 200 200 200 100 Max Units ns ns ns ns ns ns ns ns ns ms
Input test Waveforms and Measurement Level
Output Test Load
tR, tF < 5 ns
AC Read Waveforms (1)
Note: 1. CE refers to CE1, and/or CE2
10
AT5FC256
AT5FC256
Write Cycle Characteristics
Symbol tWC tAS tAH tDS tDH tWP tBLC tWPH Parameter Write Cycle Time Address Set-up Time Address Hold Time Data Set-up Time Data Hold Time Write Pulse Width Byte Load Cycle Time Write Pulse Width High 100 10 60 60 10 100 150 Min Max 10 Units ms ns ns ns ns ns s ns
AC Write Waveforms (Byte Mode)
Notes: 1. A0 controls the selection of even and odd bytes. A0 must be valid throughout the entire WE low pulse. 2. A8 through A17 must specify the sector address during each high to low transition of WE (or CE).
3. OE must be high when WE and CE are both low. 4. All bytes that are not loaded within the sector being programmed will be indeterminate.
11
AC Write Waveforms (Word Mode)
Notes: 1. A0 is don't care. 2. A8 through A17 must specify the sector address during each high to low transition of WE (or CE).
3. OE must be high when WE and CE are both low. 4. All bytes that are not loaded within the sector being programmed will be indeterminate.
12
AT5FC256
AT5FC256
Software Data Protected Programming Algorithm (1)
Device Data Address Data Address Data Address Writes Enabled
Note:
0 AA 0AAAA 55 05554 A0 0AAAA Write Bytes
1 AA 0AAAB 55 05555 A0 0AAAB Write Bytes
1. Load 3 bytes to corresponding Flash chip segment individually to enable software data protection.
13
Software Data Protected Disable Algorithm (1)
Device Data Address Data Address Data Address Data Address Data Address Data Address Writes Enabled
Note:
0 AA 0AAAA 55 05554 80 0AAAA AA 0AAAA 55 05554 20 0AAAA Write Bytes
1 AA 0AAAB 55 05555 80 0AAAB AA 0AAAB 55 05555 20 0AAAB Write Bytes
1. Load 6 bytes to corresponding Flash chip segment individually to disable software data protection.
14
AT5FC256
AT5FC256
Ordering Information
tACC (ns) 200 Ordering Code AT5FC256-20 Package PCMCIA Type 1 Operation Range Commercial (0C to 70C)
Packaging Information
PCMCIA, Type 1 PC Memory Card Dimensions in millimeters
85.6 0.2 mm
10.0 MIN. (mm)
54.0 0.1 mm
10.0 MIN. (mm)
3.3 0.1 mm 34 68 FRONT SIDE 1 35
BACK SIDE
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